How fast is phase change memory

The ability to create crystal filaments within a memory cell at the picosecond timescale means that next-generation memory might finally close the latency gap with CPUs. These crystalline filaments come into existence while the bulk of the material is still amorphous — but they represent a difference in state that can be measured and therefore used.

If you need a rough analogy, imagine a marsh or swamp that stretches for miles. People who wish to cross the swamp must trek across it on foot. Draining and dredging the swamp would be extremely expensive and time-consuming.

This is more critical than you might think. These costs have to be justified by product sales and overall performance — and while you might think this makes companies hungry to find solutions, it also makes them wary of betting on unproven technologies that might never fulfill their potential. Cookie banner We use cookies and other tracking technologies to improve your browsing experience on our site, show personalized content and targeted ads, analyze site traffic, and understand where our audiences come from.

By choosing I Accept , you consent to our use of cookies and other tracking technologies. Cybersecurity Mobile Policy Privacy Scooters. Phones Laptops Headphones Cameras. Tablets Smartwatches Speakers Drones. Accessories Buying Guides How-tos Deals. Health Energy Environment. YouTube Instagram Adobe. Kickstarter Tumblr Art Club. Film TV Games. Fortnite Game of Thrones Books. Temperature dependent thin film resistivity measurements on as-deposited thin AIST films were performed using the Van der Pauw technique.

An analytical solution of sub-threshold conduction was performed based on literature The subthreshold I-V curve shows a linear behaviour until a small applied voltage of 0. The obtained experimental data was found to be in-agreement with analytical solutions The numerical solution for threshold-switching 25 was used to match the experimental data and parameters at the threshold event such as threshold voltage and threshold current were found to be in-agreement with analytical and numerical solutions see Supplementary Information, Table S4.

How to cite this article : Shukla, K. Publisher's note: Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Wuttig, M. Phase-change materials for rewriteable data storage. Kolobov, A. Distortion-triggered loss of long-range order in solids with bonding energy hierarchy. Lai, S. Electron Devices Meet. Lankhorst, M. Low-cost and nanoscale non-volatile memory concept for future silicon chips. Bruns, G.

Nanosecond switching in GeTe phase change memory cells. Loke, D. Science , — Xiong, F. Phase-change materials: Towards a universal memory? Cassinerio, M. Ultrafast phase-change logic device driven by melting processes. USA , — Wang, W. Fast phase transitions induced by picosecond electrical pulses on phase change memory cells. Enabling universal memory by overcoming the contradictory speed and stability nature of phase change material.

Article Google Scholar. Ovshinsky, S. Reversible electrical switching phenomena in disordered structures. Adler, D. Threshold-switching in chalcogenide glass thin films. Simpson, R. Interfacial phase-change memory. Lee, T. Ab initio computer simulation of the early stages of crystallization: Application to Ge2Sb2Te5 phase-change materials.

Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated there from, and arrays fabricated from the memory elements.

US Patent 5 , , Shaw, M. Pandey, S. Sub-nanosecond threshold-switching dynamics and set process of In3SbTe2 phase change memory. Salinga, M. Measurement of crystal growth velocity in a melt-quenched phase-change material. Krebs, D. Threshold field of phase change memory materials measured using phase change bridge devices.

Ielmini, D. Threshold-switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses. B 78, Analytical model for subthreshold conduction and threshold-switching in chalcogenide-based memory devices. A Cappelli, A. Conductive preferential paths of hot carriers in amorphous phase-change materials. Buscemi, F. Electrical bistability in amorphous semiconductors: A basic analytical theory.

Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime. Gallo, M. Evidence for thermally assisted threshold-switching behavior in nanoscale phasechange memory cells.

Matsunaga, T. From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials. Lee, B. Observation of the role of subcritical nuclei in crystallization of a glassy solid. Anbarasu, M. Nanosecond threshold-switching of GeTe6 cells and their potential as selector devices.

Koelmans, W. Projected phase-change memory devices. Petersen, K. Electronic nature of amorphous threshold-switching. Sebastian, A. Crystal growth within a phase change memory cell. Zalden, P. How supercooled liquid phase change materials crystallize: snapshots after femtosecond optical excitation. Nam, S.